The
Report “Gallium Nitride (GaN) Substrates
Market Analysis: By Type (GaN on sapphire, GaN on Si, GaN on SiC, GaN on GaN);
By Products (Blu-ray Disc (BD), Radio frequency amplifiers, LEDs, UV LEDs); By
Industry (Consumer Electronics, Telecom, Industrial, Power, Solar and Wind ) –
With Forecast (2015 - 2020) )”, published by IndustryARC, the market to
cross $4 billion by 2020
Browse 70 Market Tables, 82
Figures spread through 210 Pages and an in-depth TOC on “GaN Substrates Market” http://industryarc.com/Report/1264/GaN-substrates-market-research-report.html.
Gallium Nitride is
the widely used compound semiconductor material in optoelectronics as the epitaxial
layer on different substrates. The commonly used substrates for epitaxy are
Sapphire, Silicon, and Silicon Carbide. Among these, Sapphire is the predominant substrate accounting for nearly 70% market
share. As all good things come to end at a certain time, the dominance of
sapphire is too expected to die down and take over by other capable substrates.
The market precisely in these terms is very interesting.
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The
substitutes are wide gap semiconductor materials such as Silicon Carbide and Gallium Nitride; both contain huge potential
but are in need of right amount of push from the market stakeholders to attain
strong foothold. According to a recent study by IndustryARC, SiC substrate is estimated to grow
immensely in LED and Power Electronics market by remotely substituting the
existing substrates by 2020. Contrariwise,
gallium nitride substrates are far from gaining significant share. These
substrates are slowly emerging owing to tough production process and less
yield. Moreover, the prices of these substrates are too high to attract device
producers, but hold lot of promise. There is abundant research going on to
realize the potential; Disrupting market developments, if any, are expected to
surface from both of these segments.
The
promising and potential threats of different industries are presented in the
table above. The laser diodes are the
major market for bulk GaN substrates. Over 60% demand for these substrates
come from the lasers. But, the point to note here is, that the major part of
the GaN laser diode market: market of blue lasers is rather declining market. The
other part of the market, green lasers,
is emerging and is estimated to increase demand for GaN substrates. The
dominance of Sapphire is maintained through 2020, but GaN is the most potential
substitute for lasers and Lasers is the major market for GaN.
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- Silicon Carbide is the Champion
In
both LEDs and Power Electronics segment, evolution of the SiC substrate is
anticipated. The main advantage of SiC devices is less volume, which will help
end use products such as electrics vehicles to cut down on the size of the
component units and turn more efficient. Toyota Corporation which has
consistently expressed interest in wide gap semiconductor products has developed
SiC power semiconductor in 2014, which improves fuel efficiency by 10% in
electric vehicles. Previously in 2013, Toyota established a facility for
research, development and production of SiC semiconductors at its Hirose Plant.
The
market is also witnessing key developments from the substrate and device
manufacturers as well. Cree Inc. is the
pioneer of this technology. It is the one of the key manufacturers making devices
on GaN on SiC substrates. It accounts for more than 8% share in the LED market and over 35% share in SiC power electronics
market. LEDs account for major part of the company’s revenue and the power,
RF products are growing segments. At present Cree Inc. Is the only company to
manufacture LEDs on SiC substrate, and with remarkable innovations, this company
is all set to position itself strongly. In 2013, the company introduced low
cost LED bulb and moved onto introducing the third generation bulbs in 2014.
Furthermore, in 2014, the company invested in Taiwan LED maker, Lextar
Electronics Corporation to increase its capabilities in mid and high power LED
chips. In addition to that, the company has also acquired Arkansas Power
Electronics International Inc. (APEI) to expand its research and development
capabilities in defense, aerospace and hybrid/electric vehicle markets. Thus, the
company undeniably is on the right path to accelerate in both LED and Power
Electronics markets, which would also enhance SiC substrate penetration. However,
the market is estimated to slowly adopt these changes and thus growth is not
projected as aggressive. The market for
SiC substrates is estimated to be around $209 million in 2014 and is forecast
to grow at a rate of 8.6% till 2020.
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In
addition to Cree, Infineon Technologies AG, market leader in SiC power
electronics is also estimated to contribute significantly to development of
innovative SiC products. The future of the GaN substrates belongs to these
substitutes, the wide gap semiconductor materials, but it is a slow journey.
Related
Report You May Be Interested:
- Diode Laser Market: By Type of Lasers (Double Hetero structure, Quantum Well, Quantum Cascade, Distributed Feedback, Separate Confinement Hetero Structure, VCSEL & Others); By Doping Material ( InGaN, GaN, AlGaInP, GaAlAs, InGaAs, InGaAsP, GaInAsSb & Others); By Application & Geography - Analysis and Forecast to (2013 – 2018) http://industryarc.com/Report/29/global-diode-lasers-market-research-report.html
- Digital Power Electronics Market: By Substrate wafers (GaN, SiC, Sapphire); By Components (Digital Power Management IC, Power Modules and Discrete); By Applications (IT, Consumer Electronics, Power Sector, Automobile) - Forecast (2015 – 2020) http://industryarc.com/Report/6347/Digital-Power-Electronics-Market-Research-Report.html
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IndustryARC:
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is a research and consulting firm that publishes more than 500 reports annually
in various industries, such as Agriculture, Automotive, Automation &
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